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Physics-Regularized Symbolic Modeling of 3nm FinFETs via Universal Differential Equations
A new arXiv preprint presents PRISM-UDE, a method that blends universal differential equations with physics-based regularization to build compact models of 3nm FinFET transistors. Hand-derived compact models struggle to capture transport behavior at advanced nodes, while purely data-driven neural surrogates can sacrifice physical consistency. The approach aims to yield interpretable, equation-based device models suitable for circuit simulation.